Electrical characterization of low defect density nonpolar (1120) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)

Imer, B. / Haskell, B. / Rajan, S. et al. | British Library Online Contents | 2008

Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers

Ha, S. / Mieszkowski, P. / Rowland, L. B. et al. | British Library Online Contents | 2002

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

Park, C. K. / Lee, G. S. / Lee, J. Y. et al. | British Library Online Contents | 2007

Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates

Kuznetsov, N. I. / Mynbaeva, M. G. / Melnychuk, G. et al. | British Library Online Contents | 2001

Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

Zimmermann, U. / Osterman, J. / Zhang, J. et al. | British Library Online Contents | 2002