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Aluminium Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
Aluminium Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
Aluminium Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
Wagner, G. (Autor:in) / Leitenberger, W. (Autor:in) / Irmscher, K. (Autor:in) / Schmid, F. (Autor:in) / Laube, M. (Autor:in) / Pensl, G. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 207-210
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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