Aluminium Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System: Fid-Bau Portal

Aluminium Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System

Wagner, G. / Leitenberger, W. / Irmscher, K. / Schmid, F. / Laube, M. / Pensl, G.

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Aluminium Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System

Wagner, G. / Leitenberger, W. / Irmscher, K. / Schmid, F. / Laube, M. / Pensl, G.

Aluminium Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System

Wagner, G. / Leitenberger, W. / Irmscher, K. / Schmid, F. / Laube, M. / Pensl, G.

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Title:

Aluminium Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System

Contributors:

Wagner, G. (author) / Leitenberger, W. (author) / Irmscher, K. (author) / Schmid, F. (author) / Laube, M. (author) / Pensl, G. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 207-210

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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