Aluminium Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System

Wagner, G. / Leitenberger, W. / Irmscher, K. et al. | British Library Online Contents | 2002

In-situ control during molecular beam epitaxy: impurity incorporation and dissimilar materials epitaxial growth

Daweritz, L. / Wang, Z. M. / Schippan, F. et al. | British Library Online Contents | 2000

Self-Modulating Incorporation of Sb in Si/SiGe Superlattices during Molecular Beam Epitaxial Growth

Fujita, K. / Fukatsu, S. / Usami, N. et al. | British Library Online Contents | 1993

Hydrogen Incorporation into SiC Using Plasma-Hydrogenation

Koshka, Y. / Draper, W. A. / Lakshman, R. Y. et al. | British Library Online Contents | 2002

Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth

Meziere, J. / Ferret, P. / Blanquet, E. et al. | British Library Online Contents | 2004