Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
Ferro, G. (Autor:in) / Chaussende, D. (Autor:in) / Cauwet, F. (Autor:in) / Monteil, Y. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 287-290
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth and Properties of SiC On-Axis Homoepitaxial Layers
| British Library Online Contents | 2010
Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC
| British Library Online Contents | 2012
Growth and properties of single crystalline GaN substrates and homoepitaxial layers
| British Library Online Contents | 1997
Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
| British Library Online Contents | 2007
Direction-Dependent Homoepitaxial Growth of GaN Nanowires
| British Library Online Contents | 2006