Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC
Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC
Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC
Hassan, J. (Autor:in) / Lilja, L. (Autor:in) / Booker, I.D. (Autor:in) / Bergman, J.P. (Autor:in) / Janzen, E. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 157-160
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth and Properties of SiC On-Axis Homoepitaxial Layers
British Library Online Contents | 2010
|Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
British Library Online Contents | 2004
|Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
British Library Online Contents | 2002
|Growth and properties of single crystalline GaN substrates and homoepitaxial layers
British Library Online Contents | 1997
|British Library Online Contents | 2006
|