Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Analysis of LPCVD process conditions for the deposition of low stress silicon nitride. Part I: preliminary LPCVD experiments
Analysis of LPCVD process conditions for the deposition of low stress silicon nitride. Part I: preliminary LPCVD experiments
Analysis of LPCVD process conditions for the deposition of low stress silicon nitride. Part I: preliminary LPCVD experiments
Olson, J. M. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 5 ; 51-60
01.01.2002
10 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Effect of hyperthermal annealing on LPCVD silicon nitride
| British Library Online Contents | 2016
Effect of hyperthermal annealing on LPCVD silicon nitride
| British Library Online Contents | 2016
Chemical Composition of Silicon Nitride Thin Films Prepared by LPCVD
| British Library Online Contents | 2006
High-rate deposition of high-quality Cu film with LPCVD
| British Library Online Contents | 1996
High-rate deposition of high-quality Cu film with LPCVD
| British Library Online Contents | 1996