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Quantitative depth profiling of SiOxNy layers on Si
Quantitative depth profiling of SiOxNy layers on Si
Quantitative depth profiling of SiOxNy layers on Si
van Berkum, J. G. (Autor:in) / Hopstaken, M. J. (Autor:in) / Snijders, J. H. (Autor:in) / Tamminga, Y. (Autor:in) / Cubaynes, F. N. (Autor:in)
APPLIED SURFACE SCIENCE ; 203-204 ; 414-417
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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