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Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD
Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD
Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD
Asaoka, N. (Autor:in) / Funato, H. (Autor:in) / Suhara, M. (Autor:in) / Okumura, T. (Autor:in)
APPLIED SURFACE SCIENCE ; 216 ; 413-418
01.01.2003
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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