Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy

Koizumi, A. / Fujiwara, Y. / Inoue, K. et al. | British Library Online Contents | 2003

Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy

Yoshikane, T. / Urakami, A. / Koizumi, A. et al. | British Library Online Contents | 2004

Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

Fujiwara, Y. / Nonogaki, Y. / Oga, R. et al. | British Library Online Contents | 2003

Room-Temperature Operation of Injection-Type 1.5 mum Light-Emitting Diodes with Er,O-Codoped GaAs

Fujiwara, Y. | British Library Online Contents | 2005

Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes

Wernersson, L. E. / Gustafson, B. / Gustafsson, A. et al. | British Library Online Contents | 2002