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An advantage of MOS structures with ultra thin oxide during irradiation
An advantage of MOS structures with ultra thin oxide during irradiation
An advantage of MOS structures with ultra thin oxide during irradiation
Kaschieva, S. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 100 ; 23-26
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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