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Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC
Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC
Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC
Ohshima, T. (Autor:in) / Uedono, A. (Autor:in) / Eryu, O. (Autor:in) / Lee, K. K. (Autor:in) / Abe, K. (Autor:in) / Itoh, H. (Autor:in) / Nakashima, K. (Autor:in) / Bergman, P. / Janzen, E.
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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