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Characterization of vacancy-like defects in boron-implanted silicon with slow positrons
Characterization of vacancy-like defects in boron-implanted silicon with slow positrons
Characterization of vacancy-like defects in boron-implanted silicon with slow positrons
Gebauer, J. (Autor:in) / Eichler, S. (Autor:in) / Krause-Rehberg, R. (Autor:in) / Polity, A. (Autor:in)
APPLIED SURFACE SCIENCE ; 116 ; 215-221
01.01.1997
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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