Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC: Fid-Bau Portal

Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC

Ohshima, T. / Uedono, A. / Eryu, O. / Lee, K. K. / Abe, K. / Itoh, H. / Nakashima, K.

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Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC

Ohshima, T. / Uedono, A. / Eryu, O. / Lee, K. K. / Abe, K. / Itoh, H. / Nakashima, K.

Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC

Ohshima, T. / Uedono, A. / Eryu, O. / Lee, K. K. / Abe, K. / Itoh, H. / Nakashima, K.

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Title:

Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC

Contributors:

Ohshima, T. (author) / Uedono, A. (author) / Eryu, O. (author) / Lee, K. K. (author) / Abe, K. (author) / Itoh, H. (author) / Nakashima, K. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 633-636

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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