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Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer
Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer
Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer
Eriksson, J. (Autor:in) / Rorsman, N. (Autor:in) / Zirath, H. (Autor:in) / Bergman, P. / Janzen, E.
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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