A platform for research: civil engineering, architecture and urbanism
OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension
OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension
OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension
Wang, S. R. (author) / Raynaud, C. (author) / Planson, D. (author) / Lazar, M. (author) / Chante, J. P. (author) / Bergman, P. / Janzen, E.
2003-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2000
|British Library Online Contents | 2004
|British Library Online Contents | 2002
|British Library Online Contents | 2012
|High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
British Library Online Contents | 2007
|