Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Carrier concentration and mobility in B doped Si1-xGex
Carrier concentration and mobility in B doped Si1-xGex
Carrier concentration and mobility in B doped Si1-xGex
Romano, L. (Autor:in) / Napolitani, E. (Autor:in) / Privitera, V. (Autor:in) / Scalese, S. (Autor:in) / Terrasi, A. (Autor:in) / Mirabella, S. (Autor:in) / Grimaldi, M. G. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 102 ; 49-52
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Room temperature oxidation of Cu3Ge and Cu3(Si1-xGex) on Si1-xGex
British Library Online Contents | 2001
|Photoluminescence of boron-doped Si1-xGex epilayers grown by UHV-CVD
British Library Online Contents | 2002
|Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1-xGex
British Library Online Contents | 2006
|Raman spectroscopy of Si1-xGex epilayers
British Library Online Contents | 2005
|Growth of relaxed Si1-xGex layers using an oxygen doped Si(O) compliant layer
British Library Online Contents | 2002
|