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Amorphous stability of HfO2 based ternary and binary composition spread oxide films as alternative gate dielectrics
Amorphous stability of HfO2 based ternary and binary composition spread oxide films as alternative gate dielectrics
Amorphous stability of HfO2 based ternary and binary composition spread oxide films as alternative gate dielectrics
Hasegawa, K. (Autor:in) / Ahmet, P. (Autor:in) / Okazaki, N. (Autor:in) / Hasegawa, T. (Autor:in) / Fujimoto, K. (Autor:in) / Watanabe, M. (Autor:in) / Chikyow, T. (Autor:in) / Koinuma, H. (Autor:in)
APPLIED SURFACE SCIENCE ; 223 ; 229-232
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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