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Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy
Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy
Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy
Kajikawa, Y. (Autor:in) / Kobayashi, N. (Autor:in) / Terasaki, H. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 126 ; 86-92
01.01.2006
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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