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Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy
Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy
Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy
Nishizawa, J. i. (Autor:in) / Kurabayashi, T. (Autor:in) / Plotka, P. (Autor:in) / Kikuchi, H. (Autor:in) / Hamano, T. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 429-431
01.01.2003
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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