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Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy

Nishizawa, J. i. / Kurabayashi, T. / Plotka, P. / Kikuchi, H. / Hamano, T.

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Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy

Nishizawa, J. i. / Kurabayashi, T. / Plotka, P. / Kikuchi, H. / Hamano, T.

Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy

Nishizawa, J. i. / Kurabayashi, T. / Plotka, P. / Kikuchi, H. / Hamano, T.

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Check availability in my library

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Document information

Title:

Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy

Contributors:

Nishizawa, J. i. (author) / Kurabayashi, T. (author) / Plotka, P. (author) / Kikuchi, H. (author) / Hamano, T. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 429-431

Publication date:

2003-01-01

Size:

3 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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