Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Comparison of planar inductively coupled plasma etching of GaAs in BCl3, BCl3/Ar, and BCl3/Ne
Comparison of planar inductively coupled plasma etching of GaAs in BCl3, BCl3/Ar, and BCl3/Ne
Comparison of planar inductively coupled plasma etching of GaAs in BCl3, BCl3/Ar, and BCl3/Ne
Lee, J. W. (Autor:in) / Lim, Y. T. (Autor:in) / Baek, I. K. (Autor:in) / Yoo, S. Y. (Autor:in) / Cho, G. S. (Autor:in) / Jeoin, M. H. (Autor:in) / Leem, J. Y. (Autor:in) / Pearton, S. J. (Autor:in)
APPLIED SURFACE SCIENCE ; 233 ; 402-410
01.01.2004
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
BCl3/Ne etching of III-V semiconductors in a planar inductively coupled plasma reactor
British Library Online Contents | 2004
|High rate etching of AlN using BCl3/Cl2/Ar inductively coupled plasma
British Library Online Contents | 2002
|Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas
British Library Online Contents | 2010
|The etching properties of Al2O3 thin films in N2/Cl2/BCl3 and Ar/Cl2/BCl3 gas chemistry
British Library Online Contents | 2005
|High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas
British Library Online Contents | 2001
|