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Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate
Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate
Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate
Tanaka, Y. (Autor:in) / Ohno, T. (Autor:in) / Oyanagi, N. (Autor:in) / Nishizawa, S. (Autor:in) / Suzuki, T. (Autor:in) / Fukuda, K. (Autor:in) / Yatsuo, T. (Autor:in) / Arai, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 1009-1012
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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