Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate: Fid-Bau Portal

Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate

Tanaka, Y. / Ohno, T. / Oyanagi, N. / Nishizawa, S. / Suzuki, T. / Fukuda, K. / Yatsuo, T. / Arai, K.

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Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate

Tanaka, Y. / Ohno, T. / Oyanagi, N. / Nishizawa, S. / Suzuki, T. / Fukuda, K. / Yatsuo, T. / Arai, K.

Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate

Tanaka, Y. / Ohno, T. / Oyanagi, N. / Nishizawa, S. / Suzuki, T. / Fukuda, K. / Yatsuo, T. / Arai, K.

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Title:

Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate

Contributors:

Tanaka, Y. (author) / Ohno, T. (author) / Oyanagi, N. (author) / Nishizawa, S. (author) / Suzuki, T. (author) / Fukuda, K. (author) / Yatsuo, T. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1009-1012

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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