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X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH~3
X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH~3
X-Ray Photoelectron Spectroscopy of Nitride Layer on SiC by Thermal Nitridation Using NH~3
YingShen, L. (Autor:in) / Hashimoto, S. (Autor:in) / Abe, K. (Autor:in) / Hayashibe, R. (Autor:in) / Yamagami, T. (Autor:in) / Nakao, M. (Autor:in) / Kamimura, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 1549-1552
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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