4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition: Fid-Bau Portal

4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

Kojima, K. / Takahashi, T. / Ishida, Y. / Kuroda, S. / Okumura, H. / Arai, K.

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4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

Kojima, K. / Takahashi, T. / Ishida, Y. / Kuroda, S. / Okumura, H. / Arai, K.

4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

Kojima, K. / Takahashi, T. / Ishida, Y. / Kuroda, S. / Okumura, H. / Arai, K.

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Check availability in my library

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Document information

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Document information

Title:

4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

Contributors:

Kojima, K. (author) / Takahashi, T. (author) / Ishida, Y. (author) / Kuroda, S. (author) / Okumura, H. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 209-212

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Kodigala, S. R. / Bhat, I. / Chow, T. P. et al. | British Library Online Contents | 2006

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Nishio, J. / Kushibe, M. / Masahara, K. et al. | British Library Online Contents | 2002

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Hallstedt, J. / Parent, A. / Ostling, M. et al. | British Library Online Contents | 2005