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The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study
The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study
The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study
Bockstedte, M. (Autor:in) / Mattausch, A. (Autor:in) / Pankratov, O. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 715-718
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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