Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide

Fukuda, Y. / Nishikawa, K. / Shimizu, M. et al. | British Library Online Contents | 2002

Techniques for Depth Profiling of Dopants in 4H-SiC

Osterman, J. / Hallen, A. / Anand, S. et al. | British Library Online Contents | 2001

Backside-SIMS profiling of dopants in thin Hf silicate film

Hongo, C. / Takenaka, M. / Kamimuta, Y. et al. | British Library Online Contents | 2004

Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)

Bhandari, J. / Vinet, M. / Poiroux, T. et al. | British Library Online Contents | 2008

Effect of dopants on the fracture toughness of silicon

Swadener, J. G. / Nastasi, M. | British Library Online Contents | 2002