Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS

Marseilhan, D. / Barnes, J. P. / Fillot, F. et al. | British Library Online Contents | 2008

Low energy RBS and SIMS analysis of the SiGe quantum well

Krecar, D. / Rosner, M. / Draxler, M. et al. | British Library Online Contents | 2005

Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

Jiang, Z. X. / Kim, K. / Lerma, J. et al. | British Library Online Contents | 2006

Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers

Sanchez-Almazan, F. / Napolitani, E. / Carnera, A. et al. | British Library Online Contents | 2004

Investigations of semiconductor devices using SIMS; diffusion, contamination, process control

Lee, J. C. / Won, J. / Chung, Y. et al. | British Library Online Contents | 2008