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Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS
Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS
Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS
Marseilhan, D. (Autor:in) / Barnes, J. P. (Autor:in) / Fillot, F. (Autor:in) / Hartmann, J. M. (Autor:in) / Holliger, P. (Autor:in)
APPLIED SURFACE SCIENCE ; 255 ; 1412-1414
01.01.2008
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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