Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(100) systems

Hsu, H. F. / Chan, H. Y. / Chen, T. H. et al. | British Library Online Contents | 2011

DFT calculation of the electronic properties and EEL spectrum of NiSi2

Nunez-Gonzalez, R. / Reyes-Serrato, A. / Galvan, D. H. et al. | British Library Online Contents | 2010

Experimental and theoretical study of the electronic properties of CoSi2 and NiSi2

Garcia-Mendez, M. / Galvan, D. H. / Posada-Amarillas, A. et al. | British Library Online Contents | 2004

Three-dimensional supercapacitors composed of Ba0.65Sr0.35TiO3 (BST)/NiSi2/silicon microchannel plates

Liu, T. / Zhang, H. / Wang, F. et al. | British Library Online Contents | 2011

Incorporation of Hydrogen (^1H and ^2H) into 4H-SiC during Epitaxial Growth

Linnarsson, M. K. / Forsberg, U. / Janson, M. S. et al. | British Library Online Contents | 2002