Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100): Fid-Bau Portal

Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100)

Okada, E. / Nakatsuka, O. / Oida, S. / Sakai, A. / Zaima, S. / Yasuda, Y.

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Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100)

Okada, E. / Nakatsuka, O. / Oida, S. / Sakai, A. / Zaima, S. / Yasuda, Y.

Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100)

Okada, E. / Nakatsuka, O. / Oida, S. / Sakai, A. / Zaima, S. / Yasuda, Y.

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Check availability in my library

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Document information

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Document information

Title:

Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100)

Contributors:

Okada, E. (author) / Nakatsuka, O. (author) / Oida, S. (author) / Sakai, A. (author) / Zaima, S. (author) / Yasuda, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 237 ; 150-155

Publication date:

2004-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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