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Observation of dislocations in strain-relaxed silicon-germanium thin films with flat surfaces grown on ion-implanted silicon substrates
Observation of dislocations in strain-relaxed silicon-germanium thin films with flat surfaces grown on ion-implanted silicon substrates
Observation of dislocations in strain-relaxed silicon-germanium thin films with flat surfaces grown on ion-implanted silicon substrates
Yamanaka, J. (Autor:in) / Sawano, K. (Autor:in) / Nakagawa, K. (Autor:in) / Suzuki, K. (Autor:in) / Ozawa, Y. (Autor:in) / Koh, S. (Autor:in) / Hattori, T. (Autor:in) / Shiraki, Y. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 389-392
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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