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Atomically controlled Ge epitaxial growth on Si(100) in Ar-plasma-enhanced GeH4 reaction
Atomically controlled Ge epitaxial growth on Si(100) in Ar-plasma-enhanced GeH4 reaction
Atomically controlled Ge epitaxial growth on Si(100) in Ar-plasma-enhanced GeH4 reaction
Sugawara, K. (Autor:in) / Sakuraba, M. (Autor:in) / Murota, J. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 69-72
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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