Erratum to “Selective epitaxial growth of Si1−xGex films via the alternating gas supply of Si2H6, GeH4, and Cl2: Effects of Cl2 exposure” [Mater. Lett. (2012) 89–92]

Park, S. J. / Baik, S. / Kim, H. | British Library Online Contents | 2012

Atomically controlled Ge epitaxial growth on Si(100) in Ar-plasma-enhanced GeH4 reaction

Sugawara, K. / Sakuraba, M. / Murota, J. | British Library Online Contents | 2005

Epitaxial ErSi2-x on strained and relaxed Si1-xGex

Travlos, A. / Apostolopoulos, G. / Boukos, N. et al. | British Library Online Contents | 2002

Si submonolayer and monolayer digital growth operation techniques using Si2H6 as atomically controlled growth nanotechnology

Suda, Y. / Hosoya, N. / Miki, K. | British Library Online Contents | 2003

Effects of contamination on selective epitaxial growth

MacDonald, B. J. / Paton, E. / Adem, E. et al. | British Library Online Contents | 2004