Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400degreeC

Nohira, H. / Kuroiwa, T. / Nakamura, M. et al. | British Library Online Contents | 2004

Oxidation behaviour of Cu thin films on Si wafer at 175-400degreeC

Gao, W. / Gong, H. / He, J. et al. | British Library Online Contents | 2001

AISI 304 steel: anomalous evolution of martensitic phase following heat treatments at 400degreeC

Gauzzi, F. / Montanari, R. / Principi, G. et al. | British Library Online Contents | 2006

Effect of temperatures up to 400degreeC on the impact-sliding of valve-seat contacts

Ramalho, A. / Kapsa, P. / Bouvard, G. et al. | British Library Online Contents | 2009

Thermally stable MnIr based spin valve type tunnel junction with nano-oxide layer over 400degreeC

Yoon, S. Y. / Kim, Y. I. / Lee, D. H. et al. | British Library Online Contents | 2004