400degreeC Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization

Kanno, H. / Aoki, T. / Kenjo, A. et al. | British Library Online Contents | 2005

Oxidation behaviour of Cu thin films on Si wafer at 175-400degreeC

Gao, W. / Gong, H. / He, J. et al. | British Library Online Contents | 2001

Al2O3/Si0.7Ge0.3(001) & HfO2/Si0.7Ge0.3(001) interface trap state reduction via in-situ N2/H2 RF downstream plasma passivation

Breeden, Michael / Wolf, Steven / Ueda, Scott et al. | British Library Online Contents | 2019

Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25mm heterostructure CMOS process

Paul, D. J. / Temple, M. / Olsen, S. H. et al. | British Library Online Contents | 2005

AISI 304 steel: anomalous evolution of martensitic phase following heat treatments at 400degreeC

Gauzzi, F. / Montanari, R. / Principi, G. et al. | British Library Online Contents | 2006