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    400degreeC Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization

    New search for: Kanno, H.
    New search for: Aoki, T.
    New search for: Kenjo, A.
    New search for: Sadoh, T.
    New search for: Miyao, M.

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    400degreeC Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization

    New search for: Kanno, H.
    New search for: Aoki, T.
    New search for: Kenjo, A.
    New search for: Sadoh, T.
    New search for: Miyao, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    400degreeC Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization

    New search for: Kanno, H.
    New search for: Aoki, T.
    New search for: Kenjo, A.
    New search for: Sadoh, T.
    New search for: Miyao, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    400degreeC Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization

    Contributors:

    Kanno, H. (author) / Aoki, T. (author) / Kenjo, A. (author) / Sadoh, T. (author) / Miyao, M. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 79-82

    Publication date:

    2005-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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