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The characteristic of HfO2 on strained SiGe
The characteristic of HfO2 on strained SiGe
The characteristic of HfO2 on strained SiGe
Chen, T. C. (Autor:in) / Lee, L. S. (Autor:in) / Lai, W. Z. (Autor:in) / Liu, C. W. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 209-213
01.01.2005
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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