Compressively strained Ge channels on relaxed SiGe buffer layers

Bollani, M. / Muller, E. / Signoretti, S. et al. | British Library Online Contents | 2003

Observation of defects evolution in strained SiGe layers during strain relaxation

Jang, J. H. / Phen, M. S. / Siebein, K. et al. | British Library Online Contents | 2009

Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers

Dalapati, G. K. / Chatterjee, S. / Samanta, S. K. et al. | British Library Online Contents | 2003

Raman microprobe analysis of strained polysilicon deposited layers

Talaat, H. / Negm, S. / Schaffer, H. E. et al. | British Library Online Contents | 1998

Characterization of As+ ion-implanted layers in strained-Si/SiGe/Si hetero-structures

Ishida, T. / Irieda, S. / Inada, T. et al. | British Library Online Contents | 2004