Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

Shu, G. W. / Wang, J. S. / Shen, J. L. et al. | British Library Online Contents | 2010

Carrier dynamics in small InAs/GaAs quantum dots

Zurauskiene, N. / Marcinkevicius, S. / Janssen, G. et al. | British Library Online Contents | 2002

Self organized defect free InAs/GaAs and InAs/InGaAs/GaAs quantum dots with high lateral density grown by MOCVD

Heinrichsdorff, F. / Krost, A. / Bimberg, D. et al. | British Library Online Contents | 1998

Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Hoglund, L. / Petrini, E. / Asplund, C. et al. | British Library Online Contents | 2006

Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

Kim, J. H. / Park, Y. J. / Park, Y. M. et al. | British Library Online Contents | 2007