Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems

Sartel, C. / Balloud, C. / Souliere, V. et al. | British Library Online Contents | 2004

Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS

Sartel, C. / Souliere, V. / Dazord, J. et al. | British Library Online Contents | 2002

Aluminum doping of ZnTe grown by MOVPE

Gheyas, S. I. / Hirano, S. / Nishio, M. et al. | British Library Online Contents | 1996

Aluminum doping of ZnTe grown by MOVPE

Gheyas, S. I. / Hirano, S. / Nishio, M. et al. | British Library Online Contents | 1996

Low Temperature Epitaxy of 3C SiC using Hexamethyldisilane Precursor on Si <111> Substrates

Wagner, B. / Oliver, J. / Singh, N.B. et al. | British Library Online Contents | 2012