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    Homoepitaxial Growth on 4H-SiC (0338) Face by Sublimation Close Space Technique

    New search for: Yoneda, S.
    New search for: Furusho, T.
    New search for: Takagi, H.
    New search for: Ohta, S.
    New search for: Nishino, S.
    New search for: Nipoti, R.
    New search for: Poggi, A.
    New search for: Scorzoni, A.

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    Homoepitaxial Growth on 4H-SiC (0338) Face by Sublimation Close Space Technique

    New search for: Yoneda, S.
    New search for: Furusho, T.
    New search for: Takagi, H.
    New search for: Ohta, S.
    New search for: Nishino, S.
    New search for: Nipoti, R.
    New search for: Poggi, A.
    New search for: Scorzoni, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Homoepitaxial Growth on 4H-SiC (0338) Face by Sublimation Close Space Technique

    New search for: Yoneda, S.
    New search for: Furusho, T.
    New search for: Takagi, H.
    New search for: Ohta, S.
    New search for: Nishino, S.
    New search for: Nipoti, R.
    New search for: Poggi, A.
    New search for: Scorzoni, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Homoepitaxial Growth on 4H-SiC (0338) Face by Sublimation Close Space Technique

    Contributors:

    Yoneda, S. (author) / Furusho, T. (author) / Takagi, H. (author) / Ohta, S. (author) / Nishino, S. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

    Published in:

    Silicon Carbide and Related Materials 2004 ; 129-132

    MATERIALS SCIENCE FORUM ; 483/485

    Publication date:

    2005-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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