Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
Robert, T. (Autor:in) / Marinova, M. (Autor:in) / Juillaguet, S. (Autor:in) / Henry, A. (Autor:in) / Polychroniadis, E.K. (Autor:in) / Camassel, J. (Autor:in) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
01.01.2011
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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