Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination

Sheridan, D. C. / Niu, G. / Merrett, J. N. et al. | British Library Online Contents | 2000

5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application

Hu, J. / Li, L.X. / Alexandrov, P. et al. | British Library Online Contents | 2009

Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination

Sankin, I. / Dufrene, J. B. / Merrett, J. N. et al. | British Library Online Contents | 2003

Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias

Felsl, H. P. / Wachutka, G. | British Library Online Contents | 2002

Monte Carlo Simulation of 4H-SiC IMPATT Diodes

Gruzinskis, V. / Luo, Y. / Zhao, J. H. et al. | British Library Online Contents | 2000