Demonstration of High-Power X-Band Oscillation in p^+/n^-/n^+ 4H-SiC IMPATT Diodes with Guard-Ring Termination: Fid-Bau Portal

Demonstration of High-Power X-Band Oscillation in p^+/n^-/n^+ 4H-SiC IMPATT Diodes with Guard-Ring Termination

Ono, S. / Arai, M. / Kimura, C.

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Demonstration of High-Power X-Band Oscillation in p^+/n^-/n^+ 4H-SiC IMPATT Diodes with Guard-Ring Termination

Ono, S. / Arai, M. / Kimura, C.

Demonstration of High-Power X-Band Oscillation in p^+/n^-/n^+ 4H-SiC IMPATT Diodes with Guard-Ring Termination

Ono, S. / Arai, M. / Kimura, C.

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Check availability in my library

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Document information

Title:

Demonstration of High-Power X-Band Oscillation in p^+/n^-/n^+ 4H-SiC IMPATT Diodes with Guard-Ring Termination

Contributors:

Ono, S. (author) / Arai, M. (author) / Kimura, C. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 981-984

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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