Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

Balachander, K. / Arulkumaran, S. / Egawa, T. et al. | British Library Online Contents | 2005

Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation

Lalinsky, T. / Vallo, M. / Vanko, G. et al. | British Library Online Contents | 2013

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

Neuberger, R. / Muller, G. / Eickhoff, M. et al. | British Library Online Contents | 2002

Impact of AlN Spacer on Electron Mobility of AlGaN/AlN/GaN Structures on Silicon

Roensch, S. / Sizov, V. / Yagi, T. et al. | British Library Online Contents | 2013

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors

Shimizu, M. / Inada, M. / Yagi, S. et al. | British Library Online Contents | 2009