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Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation
Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation
Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation
Lalinsky, T. (Autor:in) / Vallo, M. (Autor:in) / Vanko, G. (Autor:in) / Dobrocka, E. (Autor:in) / Vincze, A. (Autor:in) / Osvald, J. (Autor:in) / Ryger, I. (Autor:in) / Dzuba, J. (Autor:in)
APPLIED SURFACE SCIENCE ; 283 ; 160-167
01.01.2013
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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