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Structural defects in SiO2/SiC interface probed by a slow positron beam
Structural defects in SiO2/SiC interface probed by a slow positron beam
Structural defects in SiO2/SiC interface probed by a slow positron beam
Maekawa, M. (Autor:in) / Kawasuso, A. (Autor:in) / Chen, Z. Q. (Autor:in) / Yoshikawa, M. (Autor:in) / Suzuki, R. (Autor:in) / Ohdaira, T. (Autor:in)
APPLIED SURFACE SCIENCE ; 244 ; 322-325
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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