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Defect Property in He^+ Implanted Silicon Probed by Slow Positron Beam
Defect Property in He^+ Implanted Silicon Probed by Slow Positron Beam
Defect Property in He^+ Implanted Silicon Probed by Slow Positron Beam
Zhou, X. Y. (Autor:in) / Zhang, T. H. (Autor:in) / Zhang, X. F. (Autor:in) / Weng, H. M. (Autor:in) / Fan, Y. M. (Autor:in) / Du, J. F. (Autor:in) / Han, R. D. (Autor:in)
MATERIALS SCIENCE FORUM ; 363/365 ; 475-477
01.01.2001
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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